PART |
Description |
Maker |
NTP7N40-D |
Power MOSFET 7 Amps, 400 Volts N-Channel TO-220
|
ON Semiconductor
|
NGB18N40CLBT4 |
Ignition IGBT in D2ak (Gen3) with Improved SCIS Energy and Vce(on) 18 Amps, 400 Volts N-Channel D2PAK
|
ON Semiconductor
|
NTB10N40 |
Power MOSFET 10 Amps, 401 Volts N-Channel(10A,400V,N沟道增强型MOS场效应管(D2PAK封装 10 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
NGB18N40ACLBT4G |
Ignition IGBT 18 Amps, 400 Volts
|
ON Semiconductor
|
NGB8204ANT4G NGB8204N11 |
Ignition IGBT 18 Amps, 400 Volts
|
ON Semiconductor
|
2N4216 2N4214 2N4213 2N4212 |
SILICON CONTROLLED RECTIFIERS 1.6 AMPS RMS, 25-400 VOLTS
|
Digitron Semiconductors
|
SFS1829 SFS1826 SFS1827 SFS1828 |
1.6 AMPS 200 ─ 400 VOLTS SILICON CONTROLLED RECTIFIER 1.6 AMPS 200 Α 400 VOLTS SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SFS2540 SFS2510 SFS2520 SFS2525 SFS2530 |
25 AMPS 100 ─ 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER 25 AMPS 100 Α 400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
SDR8200S8 SDR8200S10 SDR8200S12 SDR8200S4 SDR8200S |
200 AMPS 400 - 1200 VOLTS 15 usec STANDARD RECOVERY HIGH CURRENT RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
SPD54151 SPD5415SMSTXV SPD5417SMSTXV SPD5420SMSTXV |
3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 50 V, SILICON, RECTIFIER DIODE 3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 200 V, SILICON, RECTIFIER DIODE 3 AMPS 50 - 600 VOLTS 150 - 400 nsec FAST RECOVERY RECTIFIER 3 A, 600 V, SILICON, RECTIFIER DIODE
|
Solid States Devices, Inc Solid State Devices, Inc.
|
NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D |
Power MOSFET -3.05 Amps-30 Volts Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V,双P通道,SO-8封装的功率MOSFET) Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8
|
ON Semiconductor
|